INVESTIGATION OF PARASITICS IN POWER CIRCUITS SWITCHED WITH CASCODE GAN HEMTS

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Thermal Behavior Investigation of Cascode GaN HEMTs

This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investi...

متن کامل

Cascode Circuits for Switched Current Copiers

Various cascode circuits are investigated with regard to their suitability for switched current copier applications. Generalized circuit representations are introduced and different cascode circuits are compared and discussed. A method called “reference voltage and current tracking” for dynamic output range improvement is proposed. An improved regulated cascode circuit with extended dynamic out...

متن کامل

atedA GaN/GaN HEMTs

Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density.

متن کامل

Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications

The lifetime and stability of AlGaN/GaN heterostructure eld e ect transistors at high power levels can be enhanced by introducing eld plates to reduce electric eld peaks in the gate drain region. Simulations of the electric eld distribution along the channel using the 2D ATLAS software from Silvaco indicate that above a characteristic drain source voltage three spatially separated electric eld ...

متن کامل

Novel GIT Structure Solves Current Collapse In GaN Power HEMTs

The advantage of GaN power devices in terms of performance is no longer hype but a reality that has empowered many power supply designers to build new applications that are more efficient, compact and able to operate in harsher environmental conditions. With a projected market size of U.S. $600 million in 2020 and a CAGR of 80% to 2020, many new players have entered the field and are introducin...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Research in Engineering and Technology

سال: 2016

ISSN: 2321-7308,2319-1163

DOI: 10.15623/ijret.2016.0534001